Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
111mOhm @ 2.9A, 10V470mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18.1 nC @ 10 V322 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
942 pF @ 30 V950 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
6-TSOPTSMT6 (SC-95)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
6-TSOP
NTGS5120PT1G
MOSFET P-CH 60V 1.8A 6TSOP
onsemi
42,195
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.35882
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.8A (Ta)
4.5V, 10V
111mOhm @ 2.9A, 10V
3V @ 250µA
18.1 nC @ 10 V
±20V
942 pF @ 30 V
-
600mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
TSMT6_TSMT6 Pkg
RQ6P015SPTR
MOSFET P-CH 100V 1.5A TSMT6
Rohm Semiconductor
23,323
In Stock
1 : ¥6.32000
Cut Tape (CT)
3,000 : ¥2.38686
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1.5A (Ta)
4V, 10V
470mOhm @ 1.5A, 10V
2.5V @ 1mA
322 nC @ 10 V
±20V
950 pF @ 25 V
-
600mW (Ta)
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.