Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V200 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
70mOhm @ 3.2A, 10V80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15.8 nC @ 10 V42 nC @ 10 V
Power Dissipation (Max)
1.1W (Ta)1.9W (Ta)
Supplier Device Package
PowerPAK® SO-8SOT-23-6
Package / Case
PowerPAK® SO-8SOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-6
ZXMP3A17E6TA
MOSFET P-CH 30V 3.2A SOT-23-6
Diodes Incorporated
113,227
In Stock
108,000
Factory
1 : ¥6.24000
Cut Tape (CT)
3,000 : ¥2.37841
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.2A (Ta)
4.5V, 10V
70mOhm @ 3.2A, 10V
1V @ 250µA
15.8 nC @ 10 V
±20V
630 pF @ 15 V
-
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
PowerPAK SO-8
SI7450DP-T1-GE3
MOSFET N-CH 200V 3.2A PPAK SO-8
Vishay Siliconix
5,285
In Stock
1 : ¥22.90000
Cut Tape (CT)
3,000 : ¥10.31302
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
3.2A (Ta)
6V, 10V
80mOhm @ 4A, 10V
4.5V @ 250µA
42 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.