Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Toshiba Semiconductor and Storage
Series
AlphaMOSU-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V40 V
Current - Continuous Drain (Id) @ 25°C
25A (Ta), 28A (Tc)80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 40A, 10V3.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA2.4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V50 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
2250 pF @ 15 V3600 pF @ 20 V
Power Dissipation (Max)
630mW (Ta), 104W (Tc)3.1W (Ta), 32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)175°C
Supplier Device Package
8-DFN-EP (3x3)8-TSON Advance (3.1x3.1)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-DFN
AON7524
MOSFET N-CH 30V 25A/28A 8DFN
Alpha & Omega Semiconductor Inc.
1,331
In Stock
1 : ¥5.25000
Cut Tape (CT)
5,000 : ¥1.88062
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
25A (Ta), 28A (Tc)
2.5V, 10V
3.3mOhm @ 20A, 10V
1.2V @ 250µA
50 nC @ 10 V
±12V
2250 pF @ 15 V
-
3.1W (Ta), 32W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
23,994
In Stock
1 : ¥7.31000
Cut Tape (CT)
5,000 : ¥2.63938
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
80A (Tc)
4.5V, 10V
2.3mOhm @ 40A, 10V
2.4V @ 300µA
41 nC @ 10 V
±20V
3600 pF @ 20 V
-
630mW (Ta), 104W (Tc)
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.