Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS84-7-F MOSFET P-CH 50V 130MA SOT23-3 Diodes Incorporated	442,197 In Stock	1 : ¥1.97000 Cut Tape (CT) 3,000 : ¥0.33716 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	50 V	130mA (Ta)	5V	10Ohm @ 100mA, 5V	2V @ 1mA	-	±20V	45 pF @ 25 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZXMP10A13FTA MOSFET P-CH 100V 600MA SOT23-3 Diodes Incorporated	24,253 In Stock	1 : ¥4.84000 Cut Tape (CT) 3,000 : ¥1.61801 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	600mA (Ta)	6V, 10V	1Ohm @ 600mA, 10V	4V @ 250µA	3.5 nC @ 10 V	±20V	141 pF @ 50 V	-	625mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IPT015N10N5ATMA1 MOSFET N-CH 100V 300A 8HSOF Infineon Technologies	15,729 In Stock	1 : ¥56.23000 Cut Tape (CT) 2,000 : ¥29.89270 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	300A (Tc)	6V, 10V	1.5mOhm @ 150A, 10V	3.8V @ 250µA	211 nC @ 10 V	±20V	16000 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.