Single FETs, MOSFETs

Results: 4
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDInfineon TechnologiesVishay Siliconix
Series
-CoolMOS™ P6SIPMOS®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V50 V60 V600 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)3.44A (Ta)4.8A (Tc)23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
45mOhm @ 3.7A, 10V130mOhm @ 3.44A, 10V160mOhm @ 9A, 10V3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA1.6V @ 250µA4V @ 1mA4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V35 nC @ 10 V44 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V875 pF @ 25 V2080 pF @ 100 V
Power Dissipation (Max)
350mW (Ta)1W (Ta), 1.7W (Tc)2.5W (Ta)176W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-DSO-8-6PG-TO220-3SOT-23
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2371EDS-T1-GE3
MOSFET P-CH 30V 4.8A SOT-23
Vishay Siliconix
11,092
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.74207
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.8A (Tc)
2.5V, 10V
45mOhm @ 3.7A, 10V
1.5V @ 250µA
35 nC @ 10 V
±12V
-
-
1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
21,931
In Stock
1 : ¥6.24000
Cut Tape (CT)
2,500 : ¥3.34840
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
3.44A (Ta)
10V
130mOhm @ 3.44A, 10V
4V @ 1mA
30 nC @ 10 V
±20V
875 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-DSO-8-6
8-SOIC (0.154", 3.90mm Width)
TO-220-3
IPP60R160P6XKSA1
MOSFET N-CH 600V 23.8A TO220-3
Infineon Technologies
358
In Stock
1 : ¥20.44000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23.8A (Tc)
10V
160mOhm @ 9A, 10V
4.5V @ 750µA
44 nC @ 10 V
±20V
2080 pF @ 100 V
-
176W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3
TO-220-3
BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
102,076
In Stock
1 : ¥1.31000
Cut Tape (CT)
3,000 : ¥0.22871
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
-
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.