Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Vishay Siliconix
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)10A (Tc)
Rds On (Max) @ Id, Vgs
49mOhm @ 3.5A, 10V200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 25 V450 pF @ 30 V
Power Dissipation (Max)
710mW (Ta), 8.3W (Tc)43W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-220ABTO-236AB
Package / Case
TO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV37ENEAR
MOSFET N-CH 60V 3.5A TO236AB
Nexperia USA Inc.
29,700
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.97139
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
3.5A (Ta)
4.5V, 10V
49mOhm @ 3.5A, 10V
2.7V @ 250µA
13 nC @ 10 V
±20V
450 pF @ 30 V
-
710mW (Ta), 8.3W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-220AB
IRFZ14PBF-BE3
MOSFET N-CH 60V 10A TO220AB
Vishay Siliconix
1,900
In Stock
1 : ¥7.14000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
10A (Tc)
-
200mOhm @ 6A, 10V
4V @ 250µA
11 nC @ 10 V
±20V
300 pF @ 25 V
-
43W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.