Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSC320N20NS3GATMA1 MOSFET N-CH 200V 36A TDSON-8 Infineon Technologies	20,527 In Stock	1 : ¥26.52000 Cut Tape (CT) 5,000 : ¥12.37126 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	36A (Tc)	10V	32mOhm @ 36A, 10V	4V @ 90µA	29 nC @ 10 V	±20V	2350 pF @ 100 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
IXFP30N25X3 MOSFET N-CHANNEL 250V 30A TO220 Littelfuse Inc.	99 In Stock 1,900 Factory	1 : ¥52.87000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	30A (Tc)	10V	60mOhm @ 15A, 10V	4.5V @ 500µA	21 nC @ 10 V	±20V	1450 pF @ 25 V	-	176W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
TK155E65Z,S1X 650V DTMOS VI TO-220 155MOHM Toshiba Semiconductor and Storage	75 In Stock	1 : ¥24.96000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	18A (Ta)	10V	155mOhm @ 9A, 10V	4V @ 730µA	29 nC @ 10 V	±30V	1635 pF @ 300 V	-	150W (Tc)	150°C	Through Hole	TO-220	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.