Single FETs, MOSFETs

Results: 2
Series
CoolMOS™OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V600 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)300A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V12V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 100A, 10V10mOhm @ 50A, 12V
Vgs(th) (Max) @ Id
3.8V @ 275µA4.5V @ 3.08mA
Gate Charge (Qg) (Max) @ Vgs
216 nC @ 10 V318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds
11987 pF @ 300 V16011 pF @ 50 V
Power Dissipation (Max)
375W (Tc)694W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-HDSOP-16-2PG-HDSOP-22-1
Package / Case
16-PowerSOP Module22-PowerBSOP Module
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IAUS300N08S5N012TATMA1
IAUS300N10S5N015TATMA1
MOSFET N-CH 100V 300A HDSOP-16-2
Infineon Technologies
2,469
In Stock
1 : ¥57.96000
Cut Tape (CT)
1,800 : ¥32.88633
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
300A (Tj)
6V, 10V
1.5mOhm @ 100A, 10V
3.8V @ 275µA
216 nC @ 10 V
±20V
16011 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HDSOP-16-2
16-PowerSOP Module
IPDQ60R010S7XTMA1
IPDQ60R010S7XTMA1
HIGH POWER_NEW PG-HDSOP-22
Infineon Technologies
95
In Stock
1 : ¥191.69000
Cut Tape (CT)
750 : ¥137.05571
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
50A (Tc)
12V
10mOhm @ 50A, 12V
4.5V @ 3.08mA
318 nC @ 12 V
±20V
11987 pF @ 300 V
-
694W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.