Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedGood-Ark Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
7.7A (Ta)140A (Tc)
Rds On (Max) @ Id, Vgs
4.6mOhm @ 50A, 10V25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
53.1 nC @ 10 V420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2569 pF @ 30 V24000 pF @ 25 V
Power Dissipation (Max)
1W (Ta)183W (Tc)
Supplier Device Package
POWERDI3333-8TO-263 (D2PAK)
Package / Case
8-PowerVDFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerDI3333-8
DMP6023LFG-7
MOSFET P-CH 60V 7.7A PWRDI3333-8
Diodes Incorporated
9,125
In Stock
1 : ¥7.47000
Cut Tape (CT)
2,000 : ¥2.85341
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
7.7A (Ta)
4.5V, 10V
25mOhm @ 5A, 10V
3V @ 250µA
53.1 nC @ 10 V
±20V
2569 pF @ 30 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
GSFT06130
GSFT06130
MOSFET, P-CH, SINGLE, -140A, -60
Good-Ark Semiconductor
3,081
In Stock
1 : ¥22.99000
Cut Tape (CT)
800 : ¥13.63943
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
140A (Tc)
4.5V, 10V
4.6mOhm @ 50A, 10V
2.5V @ 250µA
420 nC @ 10 V
±20V
24000 pF @ 25 V
-
183W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.