Single FETs, MOSFETs

Results: 5
Manufacturer
Nexperia USA Inc.Rohm SemiconductorToshiba Semiconductor and Storage
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V45 V60 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)250mA (Ta)300mA (Tc)2A (Ta)3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V2.5V, 10V2.5V, 4.5V10V
Rds On (Max) @ Id, Vgs
39mOhm @ 3A, 4.5V180mOhm @ 2A, 4.V2.4Ohm @ 250mA, 10V5Ohm @ 500mA, 10V8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id
1V @ 1mA1.5V @ 1mA2.3V @ 1mA2.5V @ 250µA-
Gate Charge (Qg) (Max) @ Vgs
4.1 nC @ 4.5 V18 nC @ 4.5 V
Vgs (Max)
±10V±12V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
12.2 pF @ 3 V15 pF @ 25 V50 pF @ 10 V200 pF @ 10 V1860 pF @ 6 V
Power Dissipation (Max)
150mW (Ta)700mW (Ta)800mW (Ta)830mW (Ta)
Operating Temperature
-65°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
TO-236ABTSMT3TUMT3VESMVMT3
Package / Case
3-SMD, Flat LeadsSC-96SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002,215
MOSFET N-CH 60V 300MA TO236AB
Nexperia USA Inc.
628,018
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.39013
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Tc)
10V
5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±30V
50 pF @ 10 V
-
830mW (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
65,590
In Stock
1 : ¥1.81000
Cut Tape (CT)
8,000 : ¥0.28039
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
100mA (Ta)
-
8Ohm @ 50mA, 4V
-
-
-
12.2 pF @ 3 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VESM
SOT-723
VMT3 Pkg
RSM002N06T2L
MOSFET N-CH 60V 250MA VMT3
Rohm Semiconductor
30,094
In Stock
This product has a maximum purchase limit
1 : ¥3.37000
Cut Tape (CT)
8,000 : ¥0.58292
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
250mA (Ta)
2.5V, 10V
2.4Ohm @ 250mA, 10V
2.3V @ 1mA
-
±20V
15 pF @ 25 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VMT3
SOT-723
TSMT3
RQ5H020TNTL
MOSFET N-CH 45V 2A TSMT3
Rohm Semiconductor
15,872
In Stock
1 : ¥5.17000
Cut Tape (CT)
3,000 : ¥2.75031
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
45 V
2A (Ta)
2.5V, 4.5V
180mOhm @ 2A, 4.V
1.5V @ 1mA
4.1 nC @ 4.5 V
±12V
200 pF @ 10 V
-
700mW (Ta)
150°C (TJ)
Surface Mount
TSMT3
SC-96
TUMT3
RZF030P01TL
MOSFET P-CH 12V 3A TUMT3
Rohm Semiconductor
48,347
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥1.98509
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
3A (Ta)
1.5V, 4.5V
39mOhm @ 3A, 4.5V
1V @ 1mA
18 nC @ 4.5 V
±10V
1860 pF @ 6 V
-
800mW (Ta)
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.