Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes Incorporated
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
5.8A (Ta)26A (Tc)
Rds On (Max) @ Id, Vgs
32mOhm @ 7A, 10V40mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs
19.3 nC @ 10 V54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
931 pF @ 15 V3600 pF @ 30 V
Power Dissipation (Max)
1.2W (Ta)2.5W (Ta), 60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-SOTO-252 (DPAK)
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
34,791
In Stock
1 : ¥7.22000
Cut Tape (CT)
2,500 : ¥2.99943
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
26A (Tc)
4.5V, 10V
40mOhm @ 20A, 10V
2.4V @ 250µA
54 nC @ 10 V
±20V
3600 pF @ 30 V
-
2.5W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
8 SO
DMP3037LSS-13
MOSFET P-CH 30V 5.8A 8SO
Diodes Incorporated
6,756
In Stock
1 : ¥3.45000
Cut Tape (CT)
2,500 : ¥1.16436
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5.8A (Ta)
4.5V, 10V
32mOhm @ 7A, 10V
2.4V @ 250µA
19.3 nC @ 10 V
±20V
931 pF @ 15 V
-
1.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.