Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
1.02A (Tc)1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
142mOhm @ 1A, 10V220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3 nC @ 4.5 V8.3 nC @ 10 V
Vgs (Max)
±12V±16V
Input Capacitance (Ciss) (Max) @ Vds
110 pF @ 15 V401 pF @ 25 V
Power Dissipation (Max)
240mW (Tc)1.3W (Ta)
Package / Case
SOT-563, SOT-666TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN10H220L-7
MOSFET N-CH 100V 1.4A SOT23
Diodes Incorporated
126,317
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.16428
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.4A (Ta)
4.5V, 10V
220mOhm @ 1.6A, 10V
2.5V @ 250µA
8.3 nC @ 10 V
±16V
401 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Pkg 5880
SI1078X-T1-GE3
MOSFET N-CH 30V 1.02A SOT563F
Vishay Siliconix
5,797
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.80063
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.02A (Tc)
2.5V, 10V
142mOhm @ 1A, 10V
1.5V @ 250µA
3 nC @ 4.5 V
±12V
110 pF @ 15 V
-
240mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
-
SOT-563, SOT-666
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.