Single FETs, MOSFETs

Results: 2
Manufacturer
Panjit International Inc.Vishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
45mOhm @ 3.9A, 10V370mOhm @ 1.1A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.6 nC @ 4.5 V15 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
125 pF @ 15 V540 pF @ 20 V
Power Dissipation (Max)
750mW (Ta)1.25W (Ta)
Supplier Device Package
SOT-23SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2318DS-T1-E3
MOSFET N-CH 40V 3A SOT23-3
Vishay Siliconix
50,617
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.40652
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
3A (Ta)
4.5V, 10V
45mOhm @ 3.9A, 10V
3V @ 250µA
15 nC @ 10 V
±20V
540 pF @ 20 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
37,869
In Stock
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.43980
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
1.1A (Ta)
1.8V, 4.5V
370mOhm @ 1.1A, 4.5V
1.3V @ 250µA
1.6 nC @ 4.5 V
±8V
125 pF @ 15 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.