Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)9.2A (Ta)
Rds On (Max) @ Id, Vgs
18mOhm @ 10A, 10V1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V864 pF @ 30 V
Power Dissipation (Max)
280mW (Tj)1.5W (Ta)
Supplier Device Package
8-SOSC-70-3 (SOT323)
Package / Case
8-SOIC (0.154", 3.90mm Width)SC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8 SO
DMT6016LSS-13
MOSFET N-CH 60V 9.2A 8SO
Diodes Incorporated
45,476
In Stock
322,500
Factory
1 : ¥5.01000
Cut Tape (CT)
2,500 : ¥1.68771
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
9.2A (Ta)
4.5V, 10V
18mOhm @ 10A, 10V
2.5V @ 250µA
17 nC @ 10 V
±20V
864 pF @ 30 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SC-70-3
2N7002WT1G
MOSFET N-CH 60V 310MA SC70-3
onsemi
24,040
In Stock
1 : ¥1.72000
Cut Tape (CT)
3,000 : ¥0.28768
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
2.5V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
280mW (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.