Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Vishay Siliconix
Series
TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
150mA (Ta)300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
2Ohm @ 500mA, 10V6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 25 V40 pF @ 25 V
Power Dissipation (Max)
250mW (Ta)350mW (Ta)
Supplier Device Package
SOT-23-3 (TO-236)TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002K-T1-E3
MOSFET N-CH 60V 300MA SOT23-3
Vishay Siliconix
474,876
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.39030
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
2Ohm @ 500mA, 10V
2.5V @ 250µA
0.6 nC @ 4.5 V
±20V
30 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-236AB
BSS123,215
MOSFET N-CH 100V 150MA TO236AB
Nexperia USA Inc.
309,956
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.38885
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
150mA (Ta)
10V
6Ohm @ 120mA, 10V
2.8V @ 1mA
-
±20V
40 pF @ 25 V
-
250mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.