Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon Technologiesonsemi
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 100A (Tc)28A (Ta), 183A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 30A,10V2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.3V @ 49µA2.4V @ 2mA3.8V @ 146µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 4.5 V111 nC @ 10 V124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 30 V5827 pF @ 20 V8200 pF @ 50 V
Power Dissipation (Max)
3W (Ta), 214W (Tc)3.9W (Ta), 171W (Tc)83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
5-DFN (5x6) (8-SOFL)PG-TDSON-8-7PG-TSON-8-3
Package / Case
8-PowerTDFN8-PowerTDFN, 5 Leads
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC027N06LS5ATMA1
MOSFET N-CH 60V 100A TDSON
Infineon Technologies
14,770
In Stock
1 : ¥20.19000
Cut Tape (CT)
5,000 : ¥8.78018
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
4.5V, 10V
2.7mOhm @ 50A, 10V
2.3V @ 49µA
30 nC @ 4.5 V
±20V
4400 pF @ 30 V
-
83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
PG-TSON-8-3
BSC027N10NS5ATMA1
MOSFET N-CH 100V 23A/100A TSON
Infineon Technologies
7,231
In Stock
1 : ¥38.83000
Cut Tape (CT)
5,000 : ¥18.14676
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
23A (Ta), 100A (Tc)
6V, 10V
2.7mOhm @ 50A, 10V
3.8V @ 146µA
111 nC @ 10 V
±20V
8200 pF @ 50 V
-
3W (Ta), 214W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TSON-8-3
8-PowerTDFN
5-DFN, 8-SO Flat Lead
NVMFS3D0P04M8LT1G
MV8 P INITIAL PROGRAM
onsemi
2,683
In Stock
1 : ¥23.23000
Cut Tape (CT)
1,500 : ¥11.02411
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
28A (Ta), 183A (Tc)
4.5V, 10V
2.7mOhm @ 30A,10V
2.4V @ 2mA
124 nC @ 10 V
±20V
5827 pF @ 20 V
-
3.9W (Ta), 171W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.