Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SSM3J328R,LF MOSFET P-CH 20V 6A SOT23F Toshiba Semiconductor and Storage	758,019 In Stock	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.69127 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.5V, 4.5V	29.8mOhm @ 3A, 4.5V	1V @ 1mA	12.8 nC @ 4.5 V	±8V	840 pF @ 10 V	-	1W (Ta)	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
PMV48XP,215 MOSFET P-CH 20V 3.5A TO236AB Nexperia USA Inc.	15,039 In Stock	1 : ¥4.35000 Cut Tape (CT) 3,000 : ¥1.47868 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.5A (Ta)	2.5V, 4.5V	55mOhm @ 2.4A, 4.5V	1.25V @ 250µA	11 nC @ 4.5 V	±12V	1000 pF @ 10 V	-	510mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
SSM3K324R,LF MOSFET N-CH 30V 4A SOT-23F Toshiba Semiconductor and Storage	19,034 In Stock	1 : ¥3.45000 Cut Tape (CT) 3,000 : ¥0.62275 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	4A (Ta)	1.8V, 4.5V	55mOhm @ 4A, 4.5V	-	-	±12V	190 pF @ 30 V	-	1W (Ta)	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
IRLR9343TRPBF MOSFET P-CH 55V 20A DPAK Infineon Technologies	11,891 In Stock	1 : ¥7.22000 Cut Tape (CT) 2,000 : ¥3.00170 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	55 V	20A (Tc)	4.5V, 10V	105mOhm @ 3.4A, 10V	1V @ 250µA	47 nC @ 10 V	±20V	660 pF @ 50 V	-	79W (Tc)	-40°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.