Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Vishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Ta)30A (Tc)
Rds On (Max) @ Id, Vgs
23.5mOhm @ 10A, 10V45mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
720 pF @ 15 V802 pF @ 50 V
Power Dissipation (Max)
1.3W (Ta)3.7W (Ta), 52W (Tc)
Supplier Device Package
PowerPAK® 1212-8SOT-23-3
Package / Case
3-SMD, SOT-23-3 VariantPowerPAK® 1212-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8
SIS890DN-T1-GE3
MOSFET N-CH 100V 30A PPAK1212-8
Vishay Siliconix
32,703
In Stock
1 : ¥11.08000
Cut Tape (CT)
3,000 : ¥4.58372
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
30A (Tc)
4.5V, 10V
23.5mOhm @ 10A, 10V
3V @ 250µA
29 nC @ 10 V
±20V
802 pF @ 50 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SOT-23-3
AOSS21311C
MOSFET P-CH 30V 4.3A SOT23-3
Alpha & Omega Semiconductor Inc.
7,725
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.80145
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.3A (Ta)
4.5V, 10V
45mOhm @ 4.3A, 10V
2.2V @ 250µA
23 nC @ 10 V
±20V
720 pF @ 15 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.