Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
HEXFET®OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)6.6A (Tc)30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
31mOhm @ 30A, 10V480mOhm @ 3.9A, 10V2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.4V @ 29µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V27 nC @ 10 V31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 25 V350 pF @ 25 V1976 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)40W (Tc)57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO252-3-11SOT-23-3 (TO-236)TO-252AA (DPAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002K-T1-E3
MOSFET N-CH 60V 300MA SOT23-3
Vishay Siliconix
568,056
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.39030
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
2Ohm @ 500mA, 10V
2.5V @ 250µA
0.6 nC @ 4.5 V
±20V
30 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO252-3
IRFR9120NTRLPBF
MOSFET P-CH 100V 6.6A DPAK
Infineon Technologies
7,978
In Stock
1 : ¥9.36000
Cut Tape (CT)
3,000 : ¥3.86277
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
100 V
6.6A (Tc)
10V
480mOhm @ 3.9A, 10V
4V @ 250µA
27 nC @ 10 V
±20V
350 pF @ 25 V
-
40W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD30N10S3L34ATMA1
MOSFET N-CH 100V 30A TO252-3
Infineon Technologies
35,524
In Stock
1 : ¥11.33000
Cut Tape (CT)
2,500 : ¥4.68330
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
30A (Tc)
4.5V, 10V
31mOhm @ 30A, 10V
2.4V @ 29µA
31 nC @ 10 V
±20V
1976 pF @ 25 V
-
57W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.