Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon TechnologiesRohm Semiconductor
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)5.8A (Ta)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 2.5V3V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
0.4mOhm @ 150A, 10V28mOhm @ 5.8A, 10V1.2Ohm @ 200mA, 2.5V
Vgs(th) (Max) @ Id
1V @ 1mA2V @ 250µA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.2 nC @ 10 V163 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V386 pF @ 15 V24000 pF @ 15 V
Power Dissipation (Max)
150mW (Ta)720mW (Ta)3.8W (Ta), 300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
PG-HSOF-8-1SOT-23-3VMT3
Package / Case
8-PowerSFNSOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN3404L-7
MOSFET N-CH 30V 5.8A SOT23-3
Diodes Incorporated
18,718
In Stock
615,000
Factory
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.59843
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.8A (Ta)
3V, 10V
28mOhm @ 5.8A, 10V
2V @ 250µA
9.2 nC @ 10 V
±20V
386 pF @ 15 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
x-xSOF-8-1
IPT004N03LATMA1
MOSFET N-CH 30V 300A 8HSOF
Infineon Technologies
2,689
In Stock
1 : ¥48.68000
Cut Tape (CT)
2,000 : ¥23.67872
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
300A (Tc)
4.5V, 10V
0.4mOhm @ 150A, 10V
2.2V @ 250µA
163 nC @ 4.5 V
±20V
24000 pF @ 15 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
VMT3 Pkg
RUM002N02T2L
MOSFET N-CH 20V 200MA VMT3
Rohm Semiconductor
620,365
In Stock
1 : ¥2.96000
Cut Tape (CT)
8,000 : ¥0.50619
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
200mA (Ta)
1.2V, 2.5V
1.2Ohm @ 200mA, 2.5V
1V @ 1mA
-
±8V
25 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VMT3
SOT-723
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.