Single FETs, MOSFETs

Results: 2
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
100 V500 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)8A (Tc)
Rds On (Max) @ Id, Vgs
850mOhm @ 4.8A, 10V1.2Ohm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V1300 pF @ 25 V
Power Dissipation (Max)
43W (Tc)125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB
IRF840PBF
MOSFET N-CH 500V 8A TO220AB
Vishay Siliconix
1,987
In Stock
1 : ¥15.27000
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N-Channel
MOSFET (Metal Oxide)
500 V
8A (Tc)
10V
850mOhm @ 4.8A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1300 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB
IRF9510PBF
MOSFET P-CH 100V 4A TO220AB
Vishay Siliconix
1,143
In Stock
1 : ¥8.78000
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P-Channel
MOSFET (Metal Oxide)
100 V
4A (Tc)
10V
1.2Ohm @ 2.4A, 10V
4V @ 250µA
8.7 nC @ 10 V
±20V
200 pF @ 25 V
-
43W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.