Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V80 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
7.8mOhm @ 21A, 10V9.2mOhm @ 18.6A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V140 nC @ 10 V
Power Dissipation (Max)
1.9W (Ta)57W (Tc)
Supplier Device Package
8-PQFN (3.3x3.3), Power33PowerPAK® SO-8
Package / Case
8-PowerWDFNPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SI7463DP-T1-GE3
MOSFET P-CH 40V 11A PPAK SO-8
Vishay Siliconix
218
In Stock
1 : ¥23.23000
Cut Tape (CT)
3,000 : ¥10.47622
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
11A (Ta)
4.5V, 10V
9.2mOhm @ 18.6A, 10V
3V @ 250µA
140 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
Power33
FDMC008N08C
MOSFET N-CHANNEL 80V 60A 8PQFN
onsemi
1,009
In Stock
24,000
Factory
1 : ¥15.43000
Cut Tape (CT)
3,000 : ¥6.95953
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
60A (Tc)
6V, 10V
7.8mOhm @ 21A, 10V
4V @ 120µA
29 nC @ 10 V
±20V
2150 pF @ 40 V
-
57W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (3.3x3.3), Power33
8-PowerWDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.