Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS670S2LH6327XTSA1 MOSFET N-CH 55V 540MA SOT23-3 Infineon Technologies	19,685 In Stock	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.58244 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	540mA (Ta)	4.5V, 10V	650mOhm @ 270mA, 10V	2V @ 2.7µA	2.26 nC @ 10 V	±20V	75 pF @ 25 V	-	360mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23	TO-236-3, SC-59, SOT-23-3
FDMC8327L MOSFET N-CH 40V 12A/14A 8MLP onsemi	11,134 In Stock	1 : ¥9.44000 Cut Tape (CT) 3,000 : ¥3.89923 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	12A (Ta), 14A (Tc)	4.5V, 10V	9.7mOhm @ 12A, 10V	3V @ 250µA	26 nC @ 10 V	±20V	1850 pF @ 20 V	-	2.3W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
EPC2045 GANFET N-CH 100V 16A DIE EPC	34,543 In Stock	1 : ¥30.79000 Cut Tape (CT) 2,500 : ¥14.97530 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	GaNFET (Gallium Nitride)	100 V	16A (Ta)	5V	7mOhm @ 16A, 5V	2.5V @ 5mA	6.5 nC @ 5 V	+6V, -4V	685 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.