Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002-7-F MOSFET N-CH 60V 115MA SOT23-3 Diodes Incorporated	418,949 In Stock	1 : ¥1.64000 Cut Tape (CT) 3,000 : ¥0.27816 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	115mA (Ta)	5V, 10V	7.5Ohm @ 50mA, 5V	2.5V @ 250µA	-	±20V	50 pF @ 25 V	-	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRLZ44NPBF MOSFET N-CH 55V 47A TO220AB Infineon Technologies	13,073 In Stock	1 : ¥10.51000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	47A (Tc)	4V, 10V	22mOhm @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	1700 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFZ44NPBF MOSFET N-CH 55V 49A TO220AB Infineon Technologies	22,693 In Stock	1 : ¥10.67000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	49A (Tc)	10V	17.5mOhm @ 25A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1470 pF @ 25 V	-	94W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.