Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V25 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.7V, 4.5V
Rds On (Max) @ Id, Vgs
900mOhm @ 430mA, 4.5V4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.06V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V175 pF @ 16 V
Power Dissipation (Max)
350mW (Ta)550mW (Ta)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
471,687
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45078
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP2004K-7
MOSFET P-CH 20V 600MA SOT23-3
Diodes Incorporated
958,652
In Stock
435,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.45811
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
600mA (Ta)
1.8V, 4.5V
900mOhm @ 430mA, 4.5V
1V @ 250µA
-
±8V
175 pF @ 16 V
-
550mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.