Single FETs, MOSFETs

Results: 3
Manufacturer
Taiwan Semiconductor CorporationVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V200 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Tc)52A (Tc)65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 13A, 10V30mOhm @ 30A, 10V345mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.1 nC @ 4.5 V14.3 nC @ 10 V130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
210 pF @ 30 V817 pF @ 15 V5100 pF @ 25 V
Power Dissipation (Max)
1W (Ta), 1.7W (Tc)3.75W (Ta), 375W (Tc)37W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-PDFN (3.1x3.1)SOT-23-3 (TO-236)TO-263 (D2PAK)
Package / Case
8-PowerWDFNTO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2309CDS-T1-GE3
MOSFET P-CH 60V 1.6A SOT23-3
Vishay Siliconix
32,369
In Stock
1 : ¥4.35000
Cut Tape (CT)
3,000 : ¥1.46768
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.6A (Tc)
4.5V, 10V
345mOhm @ 1.25A, 10V
3V @ 250µA
4.1 nC @ 4.5 V
±20V
210 pF @ 30 V
-
1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-263 (D2Pak)
SUM65N20-30-E3
MOSFET N-CH 200V 65A TO263
Vishay Siliconix
5,149
In Stock
1 : ¥38.67000
Cut Tape (CT)
800 : ¥23.33165
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
65A (Tc)
10V
30mOhm @ 30A, 10V
4V @ 250µA
130 nC @ 10 V
±20V
5100 pF @ 25 V
-
3.75W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
11,930
In Stock
1 : ¥5.17000
Cut Tape (CT)
5,000 : ¥1.64844
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
52A (Tc)
4.5V, 10V
8.5mOhm @ 13A, 10V
2.5V @ 250µA
14.3 nC @ 10 V
±20V
817 pF @ 15 V
-
37W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PDFN (3.1x3.1)
8-PowerWDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.