Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Ta)3.6A (Ta)
Rds On (Max) @ Id, Vgs
50mOhm @ 3.6A, 10V80mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.2 nC @ 10 V12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
495 pF @ 15 V587 pF @ 20 V
Power Dissipation (Max)
720mW (Ta)770mW (Ta)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG3406L-13
MOSFET N-CH 30V 3.6A SOT23
Diodes Incorporated
121,898
In Stock
70,000
Factory
1 : ¥3.45000
Cut Tape (CT)
10,000 : ¥0.51609
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
4.5V, 10V
50mOhm @ 3.6A, 10V
2V @ 250µA
11.2 nC @ 10 V
±20V
495 pF @ 15 V
-
770mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP4065S-7
MOSFET P-CH 40V 2.4A SOT23
Diodes Incorporated
22,432
In Stock
105,000
Factory
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.79556
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
2.4A (Ta)
4.5V, 10V
80mOhm @ 4.2A, 10V
3V @ 250µA
12.2 nC @ 10 V
±20V
587 pF @ 20 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.