Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS138P,215 MOSFET N-CH 60V 360MA TO236AB Nexperia USA Inc.	817,549 In Stock	1 : ¥2.05000 Cut Tape (CT) 3,000 : ¥0.34432 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	360mA (Ta)	10V	1.6Ohm @ 300mA, 10V	1.5V @ 250µA	0.8 nC @ 4.5 V	±20V	50 pF @ 10 V	-	350mW (Ta), 1.14W (Tc)	-55°C ~ 150°C (TA)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
SQS411ENW-T1_GE3 MOSFET P-CH 40V 16A PPAK1212-8W Vishay Siliconix	3,254 In Stock	1 : ¥7.47000 Cut Tape (CT) 3,000 : ¥2.83112 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	16A (Tc)	4.5V, 10V	27.3mOhm @ 8A, 10V	2.5V @ 250µA	50 nC @ 10 V	±20V	3191 pF @ 25 V	-	39.5W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® 1212-8W	PowerPAK® 1212-8W
SQS484EN-T1_GE3 MOSFET N-CH 40V 16A PPAK1212-8 Vishay Siliconix	2,526 In Stock	1 : ¥7.96000 Cut Tape (CT) 3,000 : ¥3.28691 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	16A (Tc)	4.5V, 10V	9mOhm @ 16.4A, 10V	2.5V @ 250µA	39 nC @ 10 V	±20V	1855 pF @ 25 V	-	62W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.