Single FETs, MOSFETs

Results: 2
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)6.7A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs
44mOhm @ 6.7A, 10V1.6Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V1550 pF @ 20 V
Power Dissipation (Max)
280mW (Tj)42W (Tc)
Supplier Device Package
SC-70-3 (SOT323)TO-252AA
Package / Case
SC-70, SOT-323TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SC-70-3
2N7002W
MOSFET SOT323 N 60V 13.5OHM
onsemi
56,580
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.63698
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
4.5V, 10V
1.6Ohm @ 50mA, 5V
2V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
280mW (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3 (SOT323)
SC-70, SOT-323
TO-252AA
FDD4243
MOSFET P-CH 40V 6.7A/14A DPAK
onsemi
3,276
In Stock
1 : ¥7.72000
Cut Tape (CT)
2,500 : ¥2.92685
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
6.7A (Ta), 14A (Tc)
4.5V, 10V
44mOhm @ 6.7A, 10V
3V @ 250µA
29 nC @ 10 V
±20V
1550 pF @ 20 V
-
42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.