Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta), 6A (Tc)36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 10A, 10V57mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V100 nC @ 10 V
Vgs (Max)
±12V±20V
Power Dissipation (Max)
1.9W (Ta), 10W (Tc)68W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PowerPAK® SC-75-6PowerPAK® SO-8
Package / Case
PowerPAK® SC-75-6PowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPak SO-8L
SQJ457EP-T1_GE3
MOSFET P-CH 60V 36A PPAK SO-8
Vishay Siliconix
33,881
In Stock
1 : ¥7.80000
Cut Tape (CT)
3,000 : ¥3.21199
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
36A (Tc)
4.5V, 10V
25mOhm @ 10A, 10V
2.5V @ 250µA
100 nC @ 10 V
±20V
3400 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerPAK SC-75-6L Single
SIB4316EDK-T1-GE3
N-CHANNEL 30-V (D-S) MOSFET POWE
Vishay Siliconix
8,950
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.15328
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4.5A (Ta), 6A (Tc)
2.5V, 10V
57mOhm @ 4A, 10V
1.4V @ 250µA
12 nC @ 10 V
±12V
-
-
1.9W (Ta), 10W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SC-75-6
PowerPAK® SC-75-6
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.