Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SSM3J132TU,LF MOSFET P-CH 12V 5.4A UFM Toshiba Semiconductor and Storage	5,210 In Stock	1 : ¥3.94000 Cut Tape (CT) 3,000 : ¥1.32907 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	5.4A (Ta)	1.2V, 4.5V	17mOhm @ 5A, 4.5V	1V @ 1mA	33 nC @ 4.5 V	±6V	2700 pF @ 10 V	-	500mW (Ta)	150°C	Surface Mount	UFM	3-SMD, Flat Leads
AOTF286L MOSFET N-CH 80V 13.5A/56A TO220 Alpha & Omega Semiconductor Inc.	2,308 In Stock	1 : ¥16.25000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	13.5A (Ta), 56A (Tc)	6V, 10V	6mOhm @ 20A, 10V	3.3V @ 250µA	63 nC @ 10 V	±20V	3142 pF @ 40 V	-	2.2W (Ta), 37.5W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
G230P06F MOSFET P-CH 60V 42A TO-220F Goford Semiconductor	70 In Stock	1 : ¥8.05000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	42A (Tc)	10V	23mOhm @ 10A, 10V	4V @ 250µA	62 nC @ 10 V	±20V	4669 pF @ 30 V	-	67.57W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.