Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon TechnologiesVishay Siliconix
Series
-OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
100 V150 V200 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Ta)3.8A (Tc)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 50A, 10V220mOhm @ 1.6A, 10V1.05Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA4V @ 250µA4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V25 nC @ 10 V31 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
401 pF @ 25 V666 pF @ 50 V1820 pF @ 75 V
Power Dissipation (Max)
1.3W (Ta)3.7W (Ta), 52W (Tc)150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-50°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO220-3PowerPAK® 1212-8SOT-23-3
Package / Case
PowerPAK® 1212-8TO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN10H220L-7
MOSFET N-CH 100V 1.4A SOT23
Diodes Incorporated
112,296
In Stock
33,000
Factory
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.16435
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.4A (Ta)
4.5V, 10V
220mOhm @ 1.6A, 10V
2.5V @ 250µA
8.3 nC @ 10 V
±16V
401 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-220-3
IPP200N15N3GXKSA1
MOSFET N-CH 150V 50A TO220-3
Infineon Technologies
4,282
In Stock
1 : ¥24.88000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
50A (Tc)
8V, 10V
20mOhm @ 50A, 10V
4V @ 90µA
31 nC @ 10 V
±20V
1820 pF @ 75 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
PowerPAK 1212-8
SI7119DN-T1-GE3
MOSFET P-CH 200V 3.8A PPAK1212-8
Vishay Siliconix
41,153
In Stock
1 : ¥7.96000
Cut Tape (CT)
3,000 : ¥3.28239
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.8A (Tc)
6V, 10V
1.05Ohm @ 1A, 10V
4V @ 250µA
25 nC @ 10 V
±20V
666 pF @ 50 V
-
3.7W (Ta), 52W (Tc)
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.