Single FETs, MOSFETs

Results: 4
Manufacturer
onsemiRohm SemiconductorVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V75 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)1.3A (Ta)3.2A (Ta)16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.8V, 4.5V2.7V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
37mOhm @ 7.2A, 10V80mOhm @ 3.6A, 4.5V160mOhm @ 1.5A, 4.5V3.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 100µA1V @ 250µA1.2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V6 nC @ 4.5 V24 nC @ 10 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
7.1 pF @ 10 V162 pF @ 10 V200 pF @ 10 V840 pF @ 35 V
Power Dissipation (Max)
150mW (Ta)500mW (Ta)1.25W (Tj)3.8W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
PowerPAK® 1212-8SOT-23-3 (TO-236)SOT-23-3VMT3
Package / Case
PowerPAK® 1212-8SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
4Results

Showing
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
VMT3 Pkg
RUM001L02T2CL
MOSFET N-CH 20V 100MA VMT3
Rohm Semiconductor
724,205
In Stock
This product has a maximum purchase limit
1 : ¥2.22000
Cut Tape (CT)
8,000 : ¥0.34652
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.2V, 4.5V
3.5Ohm @ 100mA, 4.5V
1V @ 100µA
-
±8V
7.1 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VMT3
SOT-723
SOT 23-3
NTR4501NT1G
MOSFET N-CH 20V 3.2A SOT23-3
onsemi
42,397
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.73764
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
3.2A (Ta)
1.8V, 4.5V
80mOhm @ 3.6A, 4.5V
1.2V @ 250µA
6 nC @ 4.5 V
±12V
200 pF @ 10 V
-
1.25W (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
NDS331N
MOSFET N-CH 20V 1.3A SUPERSOT3
onsemi
96,139
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.20587
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
2.7V, 4.5V
160mOhm @ 1.5A, 4.5V
1V @ 250µA
5 nC @ 4.5 V
±8V
162 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerPAK 1212-8
SI7812DN-T1-GE3
MOSFET N-CH 75V 16A PPAK1212-8
Vishay Siliconix
50,792
In Stock
1 : ¥16.42000
Cut Tape (CT)
3,000 : ¥7.38849
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
75 V
16A (Tc)
4.5V, 10V
37mOhm @ 7.2A, 10V
3V @ 250µA
24 nC @ 10 V
±20V
840 pF @ 35 V
-
3.8W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
Showing
of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.