Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BUK9Y4R8-60E,115 MOSFET N-CH 60V 100A LFPAK56 Nexperia USA Inc.	16,707 In Stock	1 : ¥16.34000 Cut Tape (CT) 1,500 : ¥7.74021 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	5V	4.1mOhm @ 25A, 10V	2.1V @ 1mA	50 nC @ 5 V	±10V	7853 pF @ 25 V	-	238W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BSS84PWH6327XTSA1 MOSFET P-CH 60V 150MA SOT323-3 Infineon Technologies	31,548 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.50025 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	150mA (Ta)	4.5V, 10V	8Ohm @ 150mA, 10V	2V @ 20µA	1.5 nC @ 10 V	±20V	19.1 pF @ 25 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT323	SC-70, SOT-323
CMPDM7002AG TR PBFREE MOSFET N-CH 60V 280MA SOT23 Central Semiconductor Corp	104,150 In Stock	1 : ¥4.02000 Cut Tape (CT) 3,000 : ¥1.08998 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	280mA (Ta)	5V, 10V	2Ohm @ 500mA, 10V	2.5V @ 250µA	-	40V	50 pF @ 25 V	-	350mW (Ta)	-65°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.