Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

FDMS86101 MOSFET N-CH 100V 12.4A/60A 8PQFN onsemi	10,419 In Stock	1 : ¥17.73000 Cut Tape (CT) 3,000 : ¥8.01207 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	12.4A (Ta), 60A (Tc)	6V, 10V	8mOhm @ 13A, 10V	4V @ 250µA	55 nC @ 10 V	±20V	3000 pF @ 50 V	-	2.5W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
RD3P130SPTL1 MOSFET P-CH 100V 13A TO252 Rohm Semiconductor	4,416 In Stock	1 : ¥14.86000 Cut Tape (CT) 2,500 : ¥6.71624 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	13A (Ta)	4V, 10V	200mOhm @ 6.5A, 10V	2.5V @ 1mA	40 nC @ 10 V	±20V	2400 pF @ 25 V	-	20W (Tc)	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD11DP10NMATMA1 TRENCH >=100V PG-TO252-3 Infineon Technologies	2,456 In Stock	1 : ¥13.87000 Cut Tape (CT) 2,500 : ¥6.27290 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	3.4A (Ta), 22A (Tc)	10V	111mOhm @ 18A, 10V	4V @ 1.7mA	74 nC @ 10 V	±20V	3200 pF @ 50 V	-	3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.