Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-StrongIRFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
25 V150 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)203A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 100A, 10V4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id
1.06V @ 250µA4.6V @ 265µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V200 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V12000 pF @ 75 V
Power Dissipation (Max)
350mW (Ta)3.8W (Ta), 556W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-3SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
412,233
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
IRF150P220AKMA1
IRF150P220AKMA1
MOSFET N-CH 150V 203A TO247-3
Infineon Technologies
1,572
In Stock
1 : ¥94.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
203A (Tc)
10V
2.7mOhm @ 100A, 10V
4.6V @ 265µA
200 nC @ 10 V
±20V
12000 pF @ 75 V
-
3.8W (Ta), 556W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.