Single FETs, MOSFETs

Results: 2
Series
PolarP™Ultra X4
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
200 V500 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)220A (Tc)
Rds On (Max) @ Id, Vgs
5.5mOhm @ 110A, 10V230mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
157 nC @ 10 V205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
11500 pF @ 25 V12300 pF @ 25 V
Power Dissipation (Max)
800W (Tc)890W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-264 (IXTK)TO-268HV (IXTT)
Package / Case
TO-264-3, TO-264AATO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-264
IXTK40P50P
MOSFET P-CH 500V 40A TO264
Littelfuse Inc.
856
In Stock
1 : ¥169.19000
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P-Channel
MOSFET (Metal Oxide)
500 V
40A (Tc)
10V
230mOhm @ 20A, 10V
4V @ 1mA
205 nC @ 10 V
±20V
11500 pF @ 25 V
-
890W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
IXTH220N20X4HV
IXTT220N20X4HV
MOSFET N-CH 200V 220A X4 TO268HV
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥152.28000
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N-Channel
MOSFET (Metal Oxide)
200 V
220A (Tc)
10V
5.5mOhm @ 110A, 10V
4.5V @ 250µA
157 nC @ 10 V
±20V
12300 pF @ 25 V
-
800W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-268HV (IXTT)
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.