Single FETs, MOSFETs

Results: 2
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
Last Time BuyObsolete
Drain to Source Voltage (Vdss)
12 V20 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
12.5mOhm @ 12A, 4.5V47mOhm @ 3.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
11.9 nC @ 4.5 V34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1243 pF @ 4 V3957 pF @ 6 V
Power Dissipation (Max)
860mW (Ta)2.4W (Ta)
Supplier Device Package
6-MicroFET (2x2)SOT-23-3 (TO-236)
Package / Case
6-WDFN Exposed PadTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
6-WFDFN Exposed Pad
FDMA908PZ
MOSFET P-CH 12V 12A 6MICROFET
onsemi
31,890
In Stock
1 : ¥6.90000
Cut Tape (CT)
3,000 : ¥2.63143
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
12 V
12A (Ta)
1.8V, 4.5V
12.5mOhm @ 12A, 4.5V
1V @ 250µA
34 nC @ 4.5 V
±8V
3957 pF @ 6 V
-
2.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-MicroFET (2x2)
6-WDFN Exposed Pad
SOT 23-3
NTR3A052PZT1G
MOSFET P-CH 20V 3.6A SOT23
onsemi
1,449
In Stock
1 : ¥3.94000
Cut Tape (CT)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
3.6A (Ta)
1.5V, 4.5V
47mOhm @ 3.5A, 4.5V
1V @ 250µA
11.9 nC @ 4.5 V
±8V
1243 pF @ 4 V
-
860mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.