Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V120 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Ta)12A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 50A, 10V55mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA2.4V @ 112µA
Gate Charge (Qg) (Max) @ Vgs
4.76 nC @ 4.5 V79 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
432 pF @ 15 V7400 pF @ 60 V
Power Dissipation (Max)
480mW (Ta)156W (Tc)
Supplier Device Package
PG-TDSON-8SOT-23-3 (TO-236)
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
NTR4170NT1G
MOSFET N-CH 30V SOT23-3
onsemi
50,189
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.90962
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.4A (Ta)
2.5V, 10V
55mOhm @ 3.2A, 10V
1.4V @ 250µA
4.76 nC @ 4.5 V
±12V
432 pF @ 15 V
-
480mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
2,536
In Stock
1 : ¥22.25000
Cut Tape (CT)
5,000 : ¥9.64194
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
12A (Ta), 99A (Tc)
4.5V, 10V
8mOhm @ 50A, 10V
2.4V @ 112µA
79 nC @ 10 V
±20V
7400 pF @ 60 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.