Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiToshiba Semiconductor and Storage
Series
QFET®U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V200 V
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)850mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 425mA, 10V1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 4.5 V5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V310 pF @ 25 V
Power Dissipation (Max)
270mW (Ta)2.2W (Tc)
Supplier Device Package
S-MiniSOT-223-4
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
14,918
In Stock
1 : ¥2.55000
Cut Tape (CT)
3,000 : ¥0.42675
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
400mA (Ta)
4.5V, 10V
1.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
±20V
40 pF @ 10 V
-
270mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
SOT-223-4
FQT4N20LTF
MOSFET N-CH 200V 850MA SOT223-4
onsemi
2,946
In Stock
1 : ¥6.49000
Cut Tape (CT)
4,000 : ¥2.45184
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
850mA (Tc)
5V, 10V
1.35Ohm @ 425mA, 10V
2V @ 250µA
5.2 nC @ 5 V
±20V
310 pF @ 25 V
-
2.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.