Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMG3404L-7 MOSFET N-CH 30V 4.2A SOT23 Diodes Incorporated	40,238 In Stock 1,824,000 Factory	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.79551 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	4.2A (Ta)	4.5V, 10V	25mOhm @ 5.8A, 10V	2V @ 250µA	13.2 nC @ 10 V	±20V	641 pF @ 15 V	-	780mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SQM40031EL_GE3 MOSFET P-CH 40V 120A D2PAK Vishay Siliconix	669 In Stock	1 : ¥23.07000 Cut Tape (CT) 800 : ¥13.92161 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	120A (Tc)	4.5V, 10V	3mOhm @ 30A, 10V	2.5V @ 250µA	800 nC @ 10 V	±20V	39000 pF @ 25 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTY44N10T MOSFET N-CH 100V 44A TO252 Littelfuse Inc.	0 In Stock Check Lead Time	1 : ¥20.36000 Tube	Trench	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	44A (Tc)	10V	30mOhm @ 22A, 10V	4.5V @ 25µA	33 nC @ 10 V	±30V	1262 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.