Single FETs, MOSFETs

Results: 2
Series
PowerMESH™SuperMESH™
Drain to Source Voltage (Vdss)
1000 V1500 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)8.3A (Tc)
Rds On (Max) @ Id, Vgs
1.38Ohm @ 4.15A, 10V2.5Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89.3 nC @ 10 V162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3255 pF @ 25 V3500 pF @ 25 V
Power Dissipation (Max)
230W (Tc)320W (Tc)
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Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3 HiP
STW9N150
MOSFET N-CH 1500V 8A TO247-3
STMicroelectronics
63
In Stock
1 : ¥82.91000
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N-Channel
MOSFET (Metal Oxide)
1500 V
8A (Tc)
10V
2.5Ohm @ 4A, 10V
5V @ 250µA
89.3 nC @ 10 V
±30V
3255 pF @ 25 V
-
320W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3 HiP
STW11NK100Z
MOSFET N-CH 1000V 8.3A TO247-3
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥52.62000
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N-Channel
MOSFET (Metal Oxide)
1000 V
8.3A (Tc)
10V
1.38Ohm @ 4.15A, 10V
4.5V @ 100µA
162 nC @ 10 V
±30V
3500 pF @ 25 V
-
230W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.