Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
50 V60 V
Current - Continuous Drain (Id) @ 25°C
130mA (Ta)11A (Tc)
Rds On (Max) @ Id, Vgs
107mOhm @ 8A, 5V10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
2V @ 250µA3V @ 250µA
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 5 V350 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)38W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
SOT-23-3 (TO-236)TO-252AA
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
BSS84LT1G
MOSFET P-CH 50V 130MA SOT23-3
onsemi
89,639
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.50758
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
5V
10Ohm @ 100mA, 5V
2V @ 250µA
-
±20V
30 pF @ 5 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-252AA
RFD3055LESM9A
MOSFET N-CH 60V 11A TO252AA
onsemi
21,604
In Stock
1 : ¥6.24000
Cut Tape (CT)
2,500 : ¥2.37605
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
11A (Tc)
5V
107mOhm @ 8A, 5V
3V @ 250µA
11.3 nC @ 10 V
±16V
350 pF @ 25 V
-
38W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.