Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 71A (Tc)31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
1.45mOhm @ 50A, 10V6.1mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V4000 pF @ 20 V
Power Dissipation (Max)
2.5W (Ta), 96W (Tc)3.6W (Ta), 61W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
5-DFN (5x6) (8-SOFL)PG-TDSON-8 FL
Package / Case
8-PowerTDFN8-PowerTDFN, 5 Leads
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
5-DFN, 8-SO Flat Lead
NTMFS5C670NLT1G
MOSFET N-CH 60V 17A/71A 5DFN
onsemi
23,129
In Stock
1 : ¥7.39000
Cut Tape (CT)
1,500 : ¥3.25111
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
17A (Ta), 71A (Tc)
4.5V, 10V
6.1mOhm @ 35A, 10V
2V @ 250µA
20 nC @ 10 V
±20V
1400 pF @ 25 V
-
3.6W (Ta), 61W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
PG-TDSON-8 FL
BSC014N04LSIATMA1
MOSFET N-CH 40V 31A/100A TDSON
Infineon Technologies
71,813
In Stock
1 : ¥17.08000
Cut Tape (CT)
5,000 : ¥11.33579
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
31A (Ta), 100A (Tc)
4.5V, 10V
1.45mOhm @ 50A, 10V
2V @ 250µA
55 nC @ 10 V
±20V
4000 pF @ 20 V
-
2.5W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.