Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

UJ4SC075006K4S 750V/6MOHM, SIC, STACKED CASCODE Qorvo	808 In Stock	1 : ¥530.03000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	120A (Tc)	12V	7.4mOhm @ 80A, 12V	6V @ 10mA	164 nC @ 15 V	±20V	8374 pF @ 400 V	-	714W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
SCTH40N120G2V7AG SICFET N-CH 650V 33A H2PAK-7 STMicroelectronics	0 In Stock Check Lead Time	1 : ¥161.73000 Cut Tape (CT) 1,000 : ¥105.59681 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	33A (Tc)	18V	105mOhm @ 20A, 18V	5V @ 1mA	63 nC @ 18 V	+22V, -10V	1230 pF @ 800 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.