Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
8.7A (Ta)15A (Ta), 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
4.7mOhm @ 15.2A, 10V20mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V46.2 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
1931 pF @ 15 V2100 pF @ 15 V
Power Dissipation (Max)
950mW (Ta)1.8W (Ta), 42W (Tc)
Supplier Device Package
MLPAK33POWERDI3333-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerDI3333-8
DMP3036SFG-7
MOSFET P-CH 30V 8.7A PWRDI3333-8
Diodes Incorporated
7,827
In Stock
1,102,000
Factory
1 : ¥4.93000
Cut Tape (CT)
2,000 : ¥1.86102
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
8.7A (Ta)
5V, 10V
20mOhm @ 8A, 10V
2.5V @ 250µA
16.5 nC @ 10 V
±25V
1931 pF @ 15 V
-
950mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
8-Power VDFN
PXN4R7-30QLJ
PXN4R7-30QL/SOT8002/MLPAK33
Nexperia USA Inc.
18,609
In Stock
1 : ¥5.58000
Cut Tape (CT)
3,000 : ¥2.12099
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
15A (Ta), 74A (Tc)
4.5V, 10V
4.7mOhm @ 15.2A, 10V
2.5V @ 250µA
46.2 nC @ 10 V
±20V
2100 pF @ 15 V
-
1.8W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
MLPAK33
8-PowerVDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.