Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesPanjit International Inc.STMicroelectronics
Series
-CoolMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V800 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)11A (Tc)16A (Tc)17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V10V
Rds On (Max) @ Id, Vgs
54mOhm @ 3.6A, 10V220mOhm @ 7A, 10V280mOhm @ 7.2A, 10V450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
1.3V @ 250µA3.5V @ 220µA3.5V @ 360µA4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V24 nC @ 10 V25.9 nC @ 10 V36 nC @ 10 V
Vgs (Max)
±12V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
770 pF @ 500 V994 pF @ 15 V1200 pF @ 500 V1350 pF @ 400 V
Power Dissipation (Max)
1.25W (Ta)73W (Tc)101W (Tc)105W (Tc)
Supplier Device Package
PG-TO252-2PG-TO252-3SOT-23TO-252 (DPAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IPD80R280P7ATMA1
MOSFET N-CH 800V 17A TO252
Infineon Technologies
8,494
In Stock
1 : ¥23.32000
Cut Tape (CT)
2,500 : ¥11.35876
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
17A (Tc)
10V
280mOhm @ 7.2A, 10V
3.5V @ 360µA
36 nC @ 10 V
±20V
1200 pF @ 500 V
-
101W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD80R450P7ATMA1
MOSFET N-CH 800V 11A TO252
Infineon Technologies
12,167
In Stock
1 : ¥16.26000
Cut Tape (CT)
2,500 : ¥7.34045
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
11A (Tc)
10V
450mOhm @ 4.5A, 10V
3.5V @ 220µA
24 nC @ 10 V
±20V
770 pF @ 500 V
-
73W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-2
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
STD80N240K6
N-CHANNEL 800 V, 197 MOHM TYP.,
STMicroelectronics
2,982
In Stock
1 : ¥43.92000
Cut Tape (CT)
2,500 : ¥21.39329
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
16A (Tc)
10V
220mOhm @ 7A, 10V
4V @ 100µA
25.9 nC @ 10 V
±30V
1350 pF @ 400 V
-
105W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
2,745
In Stock
1 : ¥2.87000
Cut Tape (CT)
9,000 : ¥0.42986
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
2.5V, 10V
54mOhm @ 3.6A, 10V
1.3V @ 250µA
19 nC @ 10 V
±12V
994 pF @ 15 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.