Single FETs, MOSFETs

Results: 3
Series
HEXFET®SIPMOS®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
20 V55 V240 V
Current - Continuous Drain (Id) @ 25°C
110mA (Ta)1.2A (Ta)49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
17.5mOhm @ 25A, 10V250mOhm @ 930mA, 4.5V14Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)1.8V @ 56µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.1 nC @ 10 V3.9 nC @ 4.5 V63 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
77 pF @ 25 V110 pF @ 15 V1470 pF @ 25 V
Power Dissipation (Max)
360mW (Ta)540mW (Ta)94W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
Micro3™/SOT-23PG-SOT23TO-220AB
Package / Case
TO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML2402TRPBF
MOSFET N-CH 20V 1.2A SOT23
Infineon Technologies
75,614
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.87569
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
20 V
1.2A (Ta)
2.7V, 4.5V
250mOhm @ 930mA, 4.5V
700mV @ 250µA (Min)
3.9 nC @ 4.5 V
±12V
110 pF @ 15 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
TO-220AB PKG
IRFZ44NPBF
MOSFET N-CH 55V 49A TO220AB
Infineon Technologies
12,034
In Stock
1 : ¥10.67000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
49A (Tc)
10V
17.5mOhm @ 25A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1470 pF @ 25 V
-
94W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SOT-23-3
BSS131H6327XTSA1
MOSFET N-CH 240V 110MA SOT23-3
Infineon Technologies
8,810
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68276
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
240 V
110mA (Ta)
4.5V, 10V
14Ohm @ 100mA, 10V
1.8V @ 56µA
3.1 nC @ 10 V
±20V
77 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.