Single FETs, MOSFETs

Results: 3
Manufacturer
EPCInfineon TechnologiesQorvo
Series
-eGaN®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)
60 V100 V750 V
Current - Continuous Drain (Id) @ 25°C
64A (Tc)101A (Ta)104A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V12V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 50A, 5V6.5mOhm @ 32A, 10V14.2mOhm @ 60A, 12V
Vgs(th) (Max) @ Id
2.3V @ 20µA2.5V @ 14mA5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 4.5 V23 nC @ 5 V75 nC @ 15 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 30 V3200 pF @ 50 V3245 pF @ 400 V
Power Dissipation (Max)
46W (Tc)357W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
7-QFN (3x5)D2PAK-7PG-TDSON-8-6
Package / Case
7-PowerWQFN8-PowerTDFNTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC065N06LS5ATMA1
MOSFET N-CHANNEL 60V 64A 8TDSON
Infineon Technologies
12,215
In Stock
1 : ¥12.23000
Cut Tape (CT)
5,000 : ¥4.81631
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
64A (Tc)
4.5V, 10V
6.5mOhm @ 32A, 10V
2.3V @ 20µA
13 nC @ 4.5 V
±20V
1800 pF @ 30 V
-
46W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
EPC2302
EPC2302
TRANS GAN 100V DIE .0018OHM
EPC
61,027
In Stock
1 : ¥54.27000
Cut Tape (CT)
3,000 : ¥36.28781
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
101A (Ta)
5V
1.8mOhm @ 50A, 5V
2.5V @ 14mA
23 nC @ 5 V
+6V, -4V
3200 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
7-QFN (3x5)
7-PowerWQFN
UF3C120080B7S
UJ4SC075011B7S
750V/11MOHM, N-OFF SIC STACK CAS
Qorvo
9
In Stock
1 : ¥241.37000
Cut Tape (CT)
800 : ¥160.05501
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
104A (Tc)
12V
14.2mOhm @ 60A, 12V
5.5V @ 10mA
75 nC @ 15 V
±20V
3245 pF @ 400 V
-
357W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.