Single FETs, MOSFETs

Results: 8
Manufacturer
Diodes IncorporatedInfineon TechnologiesonsemiToshiba Semiconductor and Storage
Series
-HEXFET®PowerTrench®U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V25 V30 V55 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)220mA (Ta)780mA (Ta)1.2A (Ta)2A (Ta)3.3A (Ta)6A (Ta)42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 10V2.7V, 4.5V4V, 10V4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
20mOhm @ 42A, 10V36mOhm @ 5A, 10V72mOhm @ 4.2A, 10V80mOhm @ 2A, 10V250mOhm @ 930mA, 4.5V600mOhm @ 610mA, 4.5V4Ohm @ 400mA, 4.5V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)1.06V @ 250µA1.3V @ 250µA1.5V @ 250µA2.5V @ 100µA2.5V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V3.6 nC @ 4.45 V3.9 nC @ 4.5 V9 nC @ 10 V9.3 nC @ 10 V15.9 nC @ 10 V180 nC @ 10 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V50 pF @ 25 V97 pF @ 15 V110 pF @ 15 V298 pF @ 15 V550 pF @ 10 V708 pF @ 15 V3500 pF @ 25 V
Power Dissipation (Max)
200mW (Ta)350mW (Ta)500mW (Ta)540mW (Ta)700mW (Ta)1.2W (Ta)170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
D2PAKMicro3™/SOT-23SOT-23-3SOT-23F
Package / Case
SOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
412,233
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML2402TRPBF
MOSFET N-CH 20V 1.2A SOT23
Infineon Technologies
75,614
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.87569
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
20 V
1.2A (Ta)
2.7V, 4.5V
250mOhm @ 930mA, 4.5V
700mV @ 250µA (Min)
3.9 nC @ 4.5 V
±12V
110 pF @ 15 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP3068L-7
MOSFET P-CH 30V 3.3A SOT23
Diodes Incorporated
171,528
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.62414
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.3A (Ta)
1.8V, 10V
72mOhm @ 4.2A, 10V
1.3V @ 250µA
15.9 nC @ 10 V
±12V
708 pF @ 15 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
42,583
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.15113
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
36mOhm @ 5A, 10V
2.5V @ 100µA
9.3 nC @ 10 V
±20V
550 pF @ 10 V
-
1.2W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SOT-23-3
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
Infineon Technologies
205,943
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.94214
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
20 V
780mA (Ta)
2.7V, 4.5V
600mOhm @ 610mA, 4.5V
1.5V @ 250µA
3.6 nC @ 4.45 V
±12V
97 pF @ 15 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N7002
MOSFET SOT23 N 60V 5OHM 150C
onsemi
102,805
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.98625
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FDN360P
MOSFET P-CH 30V 2A SUPERSOT3
onsemi
46,526
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.13028
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
2A (Ta)
4.5V, 10V
80mOhm @ 2A, 10V
3V @ 250µA
9 nC @ 10 V
±20V
298 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF4905STRLPBF
MOSFET P-CH 55V 42A D2PAK
Infineon Technologies
6,940
In Stock
1 : ¥22.25000
Cut Tape (CT)
800 : ¥12.42853
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
55 V
42A (Tc)
10V
20mOhm @ 42A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
3500 pF @ 25 V
-
170W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.